Composition‐Dependent High‐Performance Phototransistors Based on Solution Processed CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>/ZnO Heterostructures
نویسندگان
چکیده
Recently, hybrid organic−inorganic perovskites have emerged as promising photo-sensing materials for next-generation solution-processed phototransistors, achieving high responsivity, detectivity, and fast response. Here, a phototransistor that can detect visible light using low-cost, solution processed methylammonium lead iodide/zinc oxide (CH3NH3PbI3/ZnO) heterostructure is reported. While typical ZnO thin-film transistors (TFTs) do not show any photocurrent under illumination, CH3NH3PbI3 (MAPbI3) coated TFTs exhibit substantial photocurrent. Additionally, the optical, morphological, structural characteristics of light-absorbing layers are further controlled by altering precursor ratio iodide (II) (MAI:PbI2), which in turn affects photosensitivity. Stoichiometric composition (MAI:PbI2 = 1:1) MAPbI3 demonstrates optimal with responsivity 234 A/W detectivity 3.74 × 1013 Jones white illumination. The photo-responsivity result from combination suitable optoelectronic properties stoichiometric film its smooth interface channel.
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ژورنال
عنوان ژورنال: Advanced Optical Materials
سال: 2023
ISSN: ['2195-1071']
DOI: https://doi.org/10.1002/adom.202300367